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| SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. U TIP112F EPITAXIAL PLANAR NPN TRANSISTOR A C FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117F. E S K L M D D L T MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 100 100 5 2 A 4 50 2 W 20 150 mA UNIT T N N T V Q V V O 1 2 3 DIM A B C D E F G H R J K L M V N O P Q R H S T U V MILLIMETERS 10.30 MAX 15.30 MAX 2.70 0.30 0.85 MAX 3.20 0.20 3.00 0.30 12.30 MAX 0.75 MAX 13.60 0.50 3.90 MAX 1.20 1.30 2.54 4.50 0.20 6.80 2.60 0.20 10 25 5 0.5 2.60 0.15 F G J 1. BASE B TO-220IS EQUIVALENT CIRCUIT C -65 150 B P 2. COLLECTOR 3. EMITTER R1 = 10k R2 = 0.6k E ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance ) SYMBOL ICEO ICBO IEBO hFE VCEO(SUS) VCE(sat) VBE(ON) Cob TEST CONDITION VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=1A VCE=4V, IC=2A IC=30mA, IB=0 IC=2A, IB=8mA VCE=4V, IC=2A VCB=10V, IE=0, f=0.1MHz MIN. 1000 500 100 TYP. MAX. 2 mA 1 2 2.5 2.8 100 V V V pF mA UNIT 2002. 6. 25 Revision No : 0 1/2 TIP112F I 2.0 COLLECTOR CURRENT I C (A) 1.6 1.2 0.8 0.4 0 C - V CE 100K 250A 200A h FE - I C VCE =4V DC CURRENT GAIN h FE 5 A 0A 400A A 0 45 A 350 300 50 30K 10K 300 100 30 10 0.01 I B =150A 1 2 3 4 0.1 1 10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V BE(sat) , V CE(sat) - I C 100 SATURATION VOLTAGE VBE(sat) ,V CE(sat) (V) 30 10 3 1 0.3 0.1 0.01 V BE(sat) VCE(sat) I C /I B =500 C ob - V CB 1k 500 300 100 50 30 10 5 3 1 0.01 f=0.1MHz CAPACITANCE C ob (pF) 0.1 1 10 0.1 1 10 100 COLLECTOR CURRENT I C (A) COLLECTOR-BASE VOLTAGE VCB (V) P D - Ta 30 25 20 15 10 5 0 COLLECTOR CURRENT I C (A) POWER DISSIPATION P D (W) SAFE OPERATING AREA 10 5 3 s 1m I C MAX(PULSED) s 5m 1 0.5 0.3 DC OPERATION Tc=25 C SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0 50 100 150 200 0.1 1 CASE TEMPERATURE Ta ( C) 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2002. 6. 25 Revision No : 0 2/2 |
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